unisonic technologies co., ltd 30n06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2013 unisonic technologies co., ltd qw-r502-087.h 60v, 30 a n-channel power mosfet ? description the utc 30n06 is a low voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re sistance and excellent avalanche characteristics. this power mosfet is usually used at automotive applications in power supplies, high efficient dc to dc converters and battery operated products. ? features * r ds(on) = 40m ? @v gs = 10 v, i d =15a * ultra low gate charge ( typical 20nc ) * low reverse transfer capacitance ( c rss = typical 80 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability ? symbol to-251 1 to- 252 to-220 to-220f to-220f2 1 1 1 1 1 to-220f1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 30n06l-ta3-t 30n06g-ta3-t to-220 g d s tube 30n06l-tf1-t 30N06G-TF1-T to-220f1 g d s tube 30n06l-tf2-t 30n06g-tf2-t to-220f2 g d s tube 30n06l-tf3-t 30n06g-tf3-t to-220f g d s tube 30n06l-tm3-t 30n06g-tm3-t to-251 g d s tube 30n06l-tn3-t 30n06g-tn3-t to-252 g d s tube 30n06l-tn3-r 30n06g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
30n06 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-087.h ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v gate to source voltage v gss 20 v continuous drain current t c = 25c i d 30 a t c = 100c 21.3 a pulsed drain current (note 2) i dm 120 a avalanche energy single pulsed (note 3) e as 300 mj repetitive (note 2) e ar 8 mj power dissipation to-220 p d 79 w to-220f/ to-220f2 to-220f1 45 to-251/to-252 46 junction temperature t j +150 c operation temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repeativity rating: pulse wi dth limited by junction temperature 3. l=0.66mh, i as =30a, v dd =25v, r g =20 ? , starting t j =25c ? thermal data parameter symbol rating unit junction to ambient to-220 ja 62 c/w to-220f/ to-220f2 to-220f1 62.5 to-251/to-252 110 junction to case to-220 jc 1.9 c/w to-220f/ to-220f2 to-220f1 2.7 to-251/to-252 2.85
30n06 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-087.h ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 10 a gate-source leakage current forward i gss v gs = 20v, v ds = 0 v 100 na reverse v gs = -20v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.06 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 15 a 32 40 m ? dynamic characteristics input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1mhz 800 pf output capacitance c oss 300 pf reverse transfer capacitance c rss 50 pf switching characteristics turn-on delay time t d ( on ) v dd = 30v, i d =15 a, v gs =10v (note 1, 2) 52 ns turn-on rise time t r 96 ns turn-off delay time t d ( off ) 124 ns turn-off fall time t f 84 ns total gate charge q g v ds = 60v, v gs = 10 v, i d = 24a (note 1, 2) 20 30 nc gate-source charge q gs 6 nc gate-drain charge q gd 9 nc source-drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 30a 1.4 v maximum continuous drain-source diode forward current i s 30 a maximum pulsed drain-source diode forward current i sm 120 a notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
30n06 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-087.h ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
30n06 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-087.h ? test circuits and waveforms (cont.) switching test circuit switching waveforms 50k 0.3 f dut v ds same type as d.u.t. 10v 0.2 f 12v charge q gs q gd q g v gs 1ma v g gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
30n06 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-087.h ? typical characteristics 10 2 10 1 10 0 10 1 10 -1 10 0 drain-source voltage, v ds (v) on-state characteristics 10 2 10 1 10 0 2 gate-source voltage, v gs (v) transfer characteristics 46810 3579 v gs top: 15v 10v 8v 7v 6v 5.5v 5v bottorm: 4.5v 4.5v note: 1. v ds =25v 2. 20s pulse test 0.0 0 drain current, i d (a) 40 80 100 20 40 60 80 100 on-resistance variation vs. drain current and gate voltage 10 2 10 1 10 0 0.2 source-drain voltage, v sd (v) reverse drain current vs. allowable case temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 *note: 1. v gs =0v 2. 250s test 25 150 v gs =10v v gs =20v capacitance (pf) gate-to-source voltage, v gs (v)
30n06 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-087.h ? typical characteristics(cont.) drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) , (normalized) ( ? ) 10 1 0.1 drain-source voltage, v ds (v) maximum safe operating 1 100 case temperature, t c ( ) 75 100 150 30 maximum drain current vs. case temperature 0 125 50 25 10 20 10 100 1000 dc operation in this area by r ds (on) note: 1. t c =25 2. t j =150 3. single pulse 10ms 1ms 100s 0.01 square wave pu lse duration, t 1 (sec) 1 1e-5 1 0.1 0.1 10 0.01 transient thermal response curve 0.02 0.1 0.2 1e-4 1e-3 0.01 note: 1. z jc (t) = 0.88 /w max. 2. duty factor, d=t1/t2 3. t j -t c =p dm z jc (t) single pulse d=0.5 0.05
30n06 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-087.h utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
